Micro to Atomic Scale Surface Science and Engineering
on Si and Ge Based Systems

Professor Sang M. Han
Department of Chemical & Nuclear Engineering
University of New Mexico

Date: Thursday, April 1, 2004
Time: 4:00 p.m.
Place: Engineering II, Room 3361

ABSTRACT

The research program is aimed at solving some of the nanofabrication issues by employing fundamental surface science and engineering at multiple length scales. The research topics encompass plasma processing of thin films for integrated circuit manufacturing; selective growth of quantum structures/defect-free heteroepitaxial films, combined with atom-tracking scanning tunneling microscopy to fundamentally understand the selective growth process; and passivation of semiconductor surfaces with organic self-assembled monolayers, for the purpose of probing biofunctional activities of protein molecules on synthetically created surfaces in nanochannels. In this presentation, I will focus on (1) selective growth of Ge on Si using molecular beam epitaxy, leading to threading-dislocation-free Ge film and (2) liquid-phase adsorption kinetics of alkanethiols on hydrogenated Ge(111).